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www.irf.com 1 irf7910pbf hexfet power mosfet notes through are on page 8 thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 12 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 10 i d @ t a = 70c continuous drain current, v gs @ 4.5v 7.9 a i dm pulsed drain current 79 p d @t a = 25c maximum power dissipation 2.0 w p d @t a = 70c maximum power dissipation 1.3 w linear derating factor 1 6 mw/c t j , t stg junction and storage temperature range -55 to + 150 c so-8 applications benefits ultra-low gate impedance very low r ds(on) fully characterized avalanche voltage and current high frequency 3.3v and 5v input point- of-load synchronous buck converters for netcom and computing applications power management for netcom, computing and portable applications lead-free symbol parameter typ. max. units r jl junction-to-drain lead ??? 42 r ja junction-to-ambient ??? 62.5 c/w d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 v dss r ds(on) max i d 12v 15m ? @v gs = 4.5v 10a
irf7910pbf 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.85 1.3 v t j = 25c, i s = 8.0a, v gs = 0v ??? 0.70 ??? t j = 125c, i s = 8.0a, v gs = 0v t rr reverse recovery time ??? 50 75 ns t j = 25c, i f = 8.0a, v r =12v q rr reverse recovery charge ??? 60 90 nc di/dt = 100a/s t rr reverse recovery time ??? 51 77 ns t j = 125c, i f = 8.0a, v r =12v q rr reverse recovery charge ??? 60 90 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 100 mj i ar avalanche current ??? 8.0 a avalanche characteristics s d g diode characteristics 1.8 79 symbol parameter min. typ. max. units conditions g fs forward transconductance 18 ??? ??? s v ds = 6.0v, i d = 8.0a q g total gate charge ??? 17 26 i d = 8.0a q gs gate-to-source charge ??? 4.4 ??? nc v ds = 6.0v q gd gate-to-drain ("miller") charge ??? 5.2 ??? v gs = 4.5v q oss output gate charge ??? 16 ??? v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 9.4 ??? v dd = 6.0v t r rise time ??? 22 ??? i d = 8.0a t d(off) turn-off delay time ??? 16 ??? r g = 1.8 ? t f fall time ??? 6.3 ??? v gs = 4.5v c iss input capacitance ??? 1730 ??? v gs = 0v c oss output capacitance ??? 1340 ??? v ds = 6.0v c rss reverse transfer capacitance ??? 330 ??? pf ? = 1.0mhz v sd diode forward voltage static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 12 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c reference to 25c, i d = 1ma ??? 11.5 15 v gs = 4.5v, i d = 8.0a ??? 20 50 v gs = 2.8v, i d = 5.0a v gs(th) gate threshold voltage 0.6 ??? 2.0 v v ds = v gs , i d = 250a ??? ??? 100 a v ds = 9.6v, v gs = 0v ??? ??? 250 v ds = 9.6v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v
irf7910pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 1.0 2.0 3.0 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 r , drain-to-source on resistance (normalized) ds(on) v = i = gs d 4.5v 10a

0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 150c

0.1 1 10 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 25c

irf7910pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10203040 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 9.6v v ds = 6.0v i d = 8.0a for test circuit see figure 13
irf7910pbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 !"#$ 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 i , drain current (a) d %

irf7910pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 50 100 150 200 250 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.6a 6.4a 8.0a 0 20406080100 i d , drain current (a) 0.0120 0.0125 0.0130 0.0135 0.0140 0.0145 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v 2. 5 3. 5 4. 5 5. 5 v gs , gate -to -source voltage (v) 0. 010 0. 013 0. 015 0. 018 0. 020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 8.0a
irf7910pbf www.irf.com 7 so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
irf7910pbf 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 3.2mh r g = 25 ? , i as = 8.0a. pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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